Epitaxially-grown GaN junction field effect transistors

Charge trapping on defects in AlGaN/GaN field effect transistors

The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the char...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...

Digital Devices Based on Complementary Junction Field Effect Transistors

Now CMOS transistors are widespread component basis for digital integrated circuits. But its have a disadvantage that is high sensitiveness to environment effects such as temperature and radiation. The disadvantage restrains using CMOS IC in electronics equipment worked in extremal conditions. There is a alternative component basis that is junction field effect transistors (JFET) which possesse...

Low Frequency Noise in Junction Field Effect Transistors

-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and drain current as additional variables. Sharp peaks of noise have been observed at some values of gate bias. The mechanism of low frequency noise caused by Schockley-Read-Hall (SRH) centres and the significance of charge capture processes in and near the channel are di...